BLF7G10LS-250
Download datasheetBLF7G10LS-250
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for broadband operation (869 MHz to 960 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use (input and output)
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifiers for W-CDMA base stations and multi carrier applications in the 869 MHz to 960 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 920 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 250 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 60 W; VDS = 30 V [0] | 18.5 | 19.5 | dB | |
| RLin | input return loss | PL(AV) = 60 W; VDS = 30 V; IDq = 1800 mA [0] | -15.5 | -10 | dB | |
| ηD | drain efficiency | PL(AV) = 60 W; VDS = 30 V; 920 MHz ≤ f ≤ 960 MHz; IDq = 1800 mA [0] | 27 | 30.5 | % | |
| PL(AV) | average output power | [0] | 60 | W | ||
| ACPR | adjacent channel power ratio | PL(AV) = 60 W; VDS = 30 V; 920 MHz ≤ f ≤ 960 MHz; IDq = 1800 mA [0] | -34 | -31 | dBc | |
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF7G10LS-250 | SOT502B (SOT502B) |
sot502b_po | Reel 13" Q1/T1 | Transferred | Standard Marking |
BLF7G10LS-250,118 (9340 656 07118) |
|
| Bulk Pack | Transferred | Standard Marking |
BLF7G10LS-250,112 (9340 656 07112) |
||||
| Reel 11¼" Q1/T1 in LargePack | Transferred | Standard Marking |
BLF7G10LS-250JZ (9340 656 07135) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLF7G10LS-250 | 9340 656 07118 | BLF7G10LS-250,118 | Flip Electronics | Buy | Not available |
| BLF7G10LS-250 | 9340 656 07112 | BLF7G10LS-250,112 | Flip Electronics | Buy | Not available |
| BLF7G10LS-250 | 9340 656 07135 | BLF7G10LS-250JZ | Flip Electronics | Buy | Not available |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLF7G10LS-250 | 9340 656 07118 | BLF7G10LS-250,118 | Flip Electronics | Buy | Not available |
| BLF7G10LS-250 | 9340 656 07112 | BLF7G10LS-250,112 | Flip Electronics | Buy | Not available |
| BLF7G10LS-250 | 9340 656 07135 | BLF7G10LS-250JZ | Flip Electronics | Buy | Not available |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2016-11-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF7G10L(S)-250 (Data sheet) | Design support | 2012-02-24 |