BLF6G22LS-75
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF6G22LS-75
Download datasheetPower LDMOS transistor
75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (2000 MHz to 2200 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for W-CDMA base stations
- Multicarrier applications in the 2000 MHz to 2200 MHz frequency range
Parametrics
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 2000 | 2200 | MHz | ||
PL(3dB) | nominal output power at 3 dB gain compression | 75 | W | |||
Test signal: 2-c WCDMA | ||||||
Gp | power gain | PL(AV) = 17 W; VDS = 28 V | 17.6 | 18.7 | dB | |
RLin | input return loss | PL(AV) = 17 W; VDS = 28 V; IDq = 690 mA | -9.5 | -6.5 | dB | |
ηD | drain efficiency | PL(AV) = 17 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 690 mA | 28 | 30.5 | % | |
PL(AV) | average output power | 17 | W | |||
IMD3 | third-order intermodulation distortion | PL(AV) = 17 W; VDS = 28 V; IDq = 690 mA | -37.5 | -34 | dBc | |
ACPR | adjacent channel power ratio | PL(AV) = 17 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 690 mA | -41.5 | -38.5 | dBc |
Package / Packing
All type numbers in the table below are discontinued.
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
BLF6G22LS-75 | SOT502B (SOT502B) |
sot502b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF6G22LS-75,118 (9340 615 59118) |
|
Bulk Pack | Withdrawn | Standard Marking |
BLF6G22LS-75,112 (9340 615 59112) |
Discontinuation information
Pinning info
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | D | drain | ||
2 | G | gate | ||
3 | S | source |
Documentation
Title | Type | Date | |
---|---|---|---|
Power LDMOS transistor | Data sheet | 2015-12-07 | |
Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
Packages for RF power transistors | Leaflet | 2024-10-25 | |
LDMOS ruggedness reliability | Other type | 2017-03-28 | |
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
No documentation available.