BLF6G22LS-180RN
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF6G22LS-180RN
Download datasheetPower LDMOS transistor
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (2000 MHz to 2200 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations
- Multicarrier applications in the 2000 MHz to 2200 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2000 | 2200 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 180 | W | |||
| Test signal: 2-c WCDMA | ||||||
| Gp | power gain | PL(AV) = 40 W; VDS = 30 V | 15 | 16 | dB | |
| RLin | input return loss | PL(AV) = 40 W; VDS = 30 V; IDq = 1400 mA | -11 | -8 | dB | |
| ηD | drain efficiency | PL(AV) = 40 W; VDS = 30 V; 2110 MHz < f < 2170 MHz; IDq = 1400 mA | 22 | 25 | % | |
| PL(AV) | average output power | 40 | W | |||
| IMD3 | third-order intermodulation distortion | PL(AV) = 40 W; VDS = 30 V; IDq = 1400 mA | -38 | -34.5 | dBc | |
| ACPR | adjacent channel power ratio | PL(AV) = 40 W; VDS = 30 V; 2110 MHz < f < 2170 MHz; IDq = 1400 mA | -42 | -39 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6G22LS-180RN | SOT502B (SOT502B) |
sot502b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF6G22LS-180RN:11 (9340 627 34118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF6G22LS-180RN,11 (9340 627 34112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
No documentation available.