This device has been transferred from Ampleon to Flip Electronics.

Broadband power LDMOS transistor

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Features and benefits

  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Communication transmitter applications in the HF to 1400 MHz frequency range
  • Industrial applications in the HF to 1400 MHz frequency range

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF642

Broadband power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 1400 MHz
PL(1dB) nominal output power at 1 dB gain compression 35 W
Test signal: CW
Gp power gain VDS = 32 V 18 19 dB
ηD drain efficiency VDS = 32 V; f = 1300 MHz; IDq = 0.2 A 59 63 %
PL output power 35 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF642 SOT467C
(SOT467C)
sot467c_po Bulk Pack Transferred Standard Marking BLF642,112
(9340 651 83112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF642 9340 651 83112 BLF642,112 Flip Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF642 9340 651 83112 BLF642,112 Flip Electronics Buy Not available