This device has been transferred from Ampleon to Rochester Electronics.

VHF push-pull power MOS transistor

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279A balanced flange package, with a ceramic cap. The mounting flange provides the common source connection for the transistors.

Features and benefits

  • High power gain
  • Easy power control
  • Good thermal stability
  • Gold metallization ensures excellent reliability

Applications

  • Large signal amplifier applications in the VHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 25 175 MHz
PL(1dB) nominal output power at 1 dB gain compression 30 W
Test signal: CW
Gp power gain PL = 30 W; VDS = 28 V 14 18 dB
ηD drain efficiency PL = 30 W; VDS = 28 V; f = 175 MHz; IDq = 25 mA 55 65 %
PL output power 30 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF245B CDFM4
(SOT279A)
sot279a_po Bulk Pack Transferred Standard Marking BLF245B,112
(9340 035 20112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 G1 gate1
3 G2 gate2
4 D2 drain2
5 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF245B 9340 035 20112 BLF245B,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF245B 9340 035 20112 BLF245B,112 Rochester Electronics Buy Not available

No documentation available.