This device has been transferred from Ampleon to Rochester Electronics.

VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.

Features and benefits

  • High power gain
  • Low noise figure
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch
  • Gold metallization ensures excellent reliability

Applications

  • Large signal amplifier applications in the VHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 25 175 MHz
PL(1dB) nominal output power at 1 dB gain compression 15 W
Test signal: CW
Gp power gain PL = 15 W; VDS = 28 V 13 17 dB
ηD drain efficiency PL = 15 W; VDS = 28 V; f = 175 MHz; IDq = 25 mA 50 65 %
PL output power 15 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF244 CRFM4
(SOT123A)
sot123a_po Bulk Pack Transferred Standard Marking BLF244,112
(9338 170 40112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 S source
3 G gate
4 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF244 9338 170 40112 BLF244,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF244 9338 170 40112 BLF244,112 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF244 12 5V 25mA S-parameter Data S-parameter 2012-06-08
BLF244 28V 25mA S-parameter Data S-parameter 2012-06-08
BLF244 14V 25mA S-parameter Data S-parameter 2012-06-08