This device has been transferred from Ampleon to Rochester Electronics.

HF/VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap

Features and benefits

  • High power gain
  • Easy power control
  • Gold metallization
  • Good thermal stability
  • Withstands full load mismatch

Applications

  • Communications transmitters in the HF/VHF range
  • Nominal supply voltage of 12.5 V

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 20 175 MHz
PL(1dB) nominal output power at 1 dB gain compression 2 W
Test signal: CW
Gp power gain PL = 2 W; VDS = 12.5 V 10 13 dB
ηD drain efficiency PL = 2 W; VDS = 12.5 V; f = 175 MHz; IDq = 20 mA 50 55 %
PL output power 2 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF202 CDIP8
(SOT409A)
sot409a_po Reel 7" Q1/T1 Transferred Standard Marking BLF202,115
(9340 556 27115)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 S souce
2 G gate
3 G gate
4 S source
5 S source
6 D drain
7 D drain
8 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF202 9340 556 27115 BLF202,115 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF202 9340 556 27115 BLF202,115 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF202 6 25V 20mA S-parameter Data S-parameter 2012-06-08
BLF202 12 5V 20mA S-parameter Data S-parameter 2012-06-08