This device has been transferred from Ampleon to Rochester Electronics.

HF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.

Features and benefits

  • High power gain
  • Low noise figure
  • Good thermal stability
  • Withstand full load mismatch.

Applications

  • SSB transmitter applications in the HF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 30 MHz
PL(1dB) nominal output power at 1 dB gain compression 30 W
Test signal: CW
Gp power gain PL = 30 W; VDS = 28 V; f = 28 MHz; IDq = 1.3 A 20 dB
ηD drain efficiency VDS = 28 V; f = 28 MHz; IDq = 1.3 A 40 %
IMD3 third-order intermodulation distortion VDS = 28 V; IDq = 1.3 A [0] -43 -40 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF145 CRFM4
(SOT123A)
sot123a_po Bulk Pack Transferred Standard Marking BLF145,112
(9338 170 70112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 S souce
3 G gate
4 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF145 9338 170 70112 BLF145,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF145 9338 170 70112 BLF145,112 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF145 14V 250mA S-parameter Data S-parameter 2012-06-08
BLF145 28V 250mA S-parameter Data S-parameter 2012-06-08