BLC9G22LS-120VT
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLC9G22LS-120VT
Download datasheetPower LDMOS transistor
120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2180 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical)
- Designed for broadband operation (2110 MHz to 2180 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to 2180 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2110 | 2180 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 120 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| VDS | drain-source voltage | 2110-2180 MHz [0] | 28 | V | ||
| Gp | power gain | 2110-2180 MHz [0] | 18.1 | dB | ||
| PL(AV) | average output power | 2110-2180 MHz [0] | 30 | W | ||
| ηD | drain efficiency | 2110-2180 MHz [0] | 31 | % | ||
| IDq | quiescent drain current | 2110-2180 MHz [0] | 700 | mA | ||
| ACPR5M | adjacent channel power ratio (5 MHz) | 2110-2180 MHz [0] | -32.5 [1] | dBc | ||
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC9G22LS-120VT | SOT1271-2 (SOT1271-2) |
sot1271-2_po | Tray, NonBakeable, Multiple in Drypack | Discontinued | Standard Marking |
BLC9G22LS-120VTZ (9349 600 78517) |
|
| Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLC9G22LS-120VTY (9349 600 78518) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source | ||
| 4 | VD | video decoupling | ||
| 5 | VD | video decoupling | ||
| 6 | n.c. | not connected | ||
| 7 | n.c. | not connected |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Power LDMOS transistor | Data sheet | 2018-07-05 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| BLC9G22LS-120VT Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-10-16 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |