BLC10G19LS-250WT
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLC10G19LS-250WT
Download datasheetPower LDMOS transistor
250 W LDMOS power transistor for base station applications at frequencies from 1930 MHz to 1990 MHz.
Features and benefits
- Excellent ruggedness
- Excellent video bandwidth enabling full band operation
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for low memory effects providing excellent pre-distortability
- Device can operate with the supply current delivered through video leads
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifier for W-CDMA base stations and multi carrier applications in the 1930 MHz to 1990 MHz frequency range
Parametrics
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 1930 | 1990 | MHz | ||
PL(3dB) | nominal output power at 3 dB gain compression | 250 | W | |||
Test signal: 2-c W-CDMA | ||||||
VDS | drain-source voltage | 1930 to 1990 MHz [0] | 28 | V | ||
Gp | power gain | 1930 to 1990 MHz [0] | 19.3 | dB | ||
ηD | drain efficiency | 1930 to 1990 MHz [0] | 31 | % | ||
PL(AV) | average output power | 1930 to 1990 MHz [0] | 60 | W | ||
IDq | quiescent drain current | 1930 to 1990 MHz [0] | 1400 | mA | ||
ACPR | adjacent channel power ratio | 1930 to 1990 MHz [0] | -31 [1] | dBc |
Package / Packing
All type numbers in the table below are discontinued.
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
BLC10G19LS-250WT | SOT1271-2 (SOT1271-2) |
sot1271-2_po | Reel 13" Q1/T1 | Discontinued | Standard Marking |
BLC10G19LS-250WTY (9349 600 75518) |
|
Bulk Pack | Discontinued | Standard Marking |
BLC10G19LS-250WTZ (9349 600 75517) |
Discontinuation information
Pinning info
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | D | drain | ||
2 | G | gate | ||
3 | S | source | ||
4 | VD | video decoupling | ||
5 | VD | video decoupling | ||
6 | n.c | not connected | ||
7 | n.c | not connected |
Documentation
Title | Type | Date | |
---|---|---|---|
Power LDMOS transistor | Data sheet | 2017-10-19 | |
Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
Packages for RF power transistors | Leaflet | 2024-10-25 | |
LDMOS ruggedness reliability | Other type | 2017-03-28 | |
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
Title | Type | Date | |
---|---|---|---|
Printed-Circuit Board (PCB) BLC10G19LS-250WT (Data sheet) | Design support | 2017-10-26 |