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BLS6G3135-20

BLS6G3135-20

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This device has been transferred from Ampleon to Flip Electronics.

This device has been transferred from Ampleon to Flip Electronics.

LDMOS S-Band radar power transistor

20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Features and benefits

  • Excellent ruggedness
  • Integrated ESD protection
  • Excellent thermal stability
  • Internally matched for ease of use
  • High efficiency
  • Designed for broadband operation (3.1 GHz to 3.5 GHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Radar applications in the 3.1 GHz to 3.5 GHz frequency range
  • S-Band power amplifiers

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLS6G3135-20

LDMOS S-Band radar power transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 3100 3500 MHz
PL(1dB) nominal output power at 1 dB gain compression 20 W
Test signal: Pulsed RF
Gp power gain PL = 20 W; VDS = 32 V 12 15.5 dB
ηD drain efficiency PL = 20 W; VDS = 32 V; 3100 MHz ≤ f ≤ 3500 MHz; IDq = 50 mA 40 45 %
PL output power 20 W
VDS drain-source voltage PL = 20 W 32 V
tr rise time PL = 20 W; VDS = 32 V 20 50 ns
tf fall time PL = 20 W; VDS = 32 V 10 50 ns

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering		 Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLS6G3135-20 CDFM2
(SOT608A)		 sot608a_po Bulk Pack Transferred Standard Marking BLS6G3135-20,112
(9340 600 62112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLS6G3135-20 9340 600 62112 BLS6G3135-20,112 Flip Electronics Buy Not available