Power LDMOS transistor

A 30 W LDMOS driver transistor for broadcast, class-AB transmitter and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from 400 MHz to 860 MHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Broadcast transmitter applications in the UHF band
  • Digital and analog broadcasting
  • Industrial, scientific and medical applications
  • Applicable at frequencies from 400 MHz to 860 MHz

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 400 860 MHz
PL(1dB) nominal output power at 1 dB gain compression 30 W
Test signal: Pulsed CW
VDS drain-source voltage PL = 30 W [0] 50 V
Gp power gain PL = 30 W [0] 18.5 20.2 dB
ηD drain efficiency PL = 30 W [0] 59 62 %
RLin input return loss PL = 30 W [0] -12 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP0408H9S30G TO270
(TO-270-2G-1)
to270-2g-1 TR13; 500-fold; 24 mm; dry pack Active Standard Marking BLP0408H9S30GZ
(9349 607 56515)
TR7; 100-fold; 24 mm; dry pack Active Standard Marking BLP0408H9S30GXY
(9349 607 56538)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source [1]

Design support

Title Type Date
Printed-Circuit Board (PCB) BLP0408H9S30G (Data sheet) Design support 2025-03-14