BLM7G1822S-80AB
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLM7G1822S-80AB
Download datasheet
This product has been discontinued.
Click here for discontinuation information.
The replacement is: BLM9D1822S-60PBG
The replacement is: BLM9D1822S-60PBG
LDMOS 2-stage power MMIC
The BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.
Features and benefits
- Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
- High section-to-section isolation enabling multiple combinations
- High Doherty efficiency thanks to 2 : 1 asymmetry
- Integrated temperature compensated bias
- Biasing of individual stages is externally accessible
- Integrated ESD protection
- Excellent thermal stability
- High power gain
- On-chip matching for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
Applications
- RF power MMIC for W-CDMA base stations in the 1805 MHz to 2170 MHz frequency range. Possible circuit topologies are the following:
- Asymmetric final stage in Doherty configuration
- Asymmetric driver for high power Doherty amplifier
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1805 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 80 | W | |||
| Test signal: 1-c W-CDMA, Peaking section | ||||||
| Gp | power gain | PL(AV) = 8 W; VDS = 28 V; f = 2167.5 MHz | 26.8 | 28.3 | 29.8 | dB |
| RLin | input return loss | PL(AV) = 8 W; VDS = 28 V; f = 2167.5 MHz; IDq = 80 mA; IDq2 = 240 mA | -20 | -10 | dB | |
| ηD | drain efficiency | PL(AV) = 8 W; VDS = 28 V; f = 2167.5 MHz | 20 | 24 | % | |
| ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 8 W; VDS = 28 V; f = 2167.5 Hz; IDq = 80 mA; IDq2 = 240 mA | -36 | -31 | dBc | |
| PARo | output peak-to-average ratio | f = 2167.5 MHz | 5.2 | 7 | dB | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLM7G1822S-80AB | HSOP16F (SOT1211-2) |
sot1211-2_po | Reel 13" Q1/T1 in Drypack | Withdrawn | Standard Marking |
BLM7G1822S-80ABY (9340 687 26518) |
Discontinuation information
| Type number | Ordering code (12NC) | Last-time buy date | Last-time delivery date | Replacement product | DN Notice | Status | Comments |
|---|---|---|---|---|---|---|---|
| BLM7G1822S-80AB | 9340 687 26518 | 2021-12-31 | 2022-03-31 | BLM9D1822S-60PBG | 202107006DN | Full Withdrawal |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | VDS(A1) | drain-source voltage of carrier section, driver stage (A1) |
|
|
| 2 | VGS(A2) | gate-source voltage of carrier section, final stage (A2) | ||
| 3 | VGS(A1) | gate-source voltage of carrier section, driver stage (A1) | ||
| 4 | RF_IN_A | RF input carrier section (A) | ||
| 5 | n.c. | not connected | ||
| 6 | n.c. | not connected | ||
| 7 | n.c. | not connected | ||
| 8 | n.c. | not connected | ||
| 9 | n.c. | not connected | ||
| 10 | n.c. | not connected | ||
| 11 | RF_IN_B | RF input peaking section (B) | ||
| 12 | VGS(B1) | gate-source voltage of peaking section, driver stage (B1) | ||
| 13 | VGS(B2) | gate-source voltage of peaking section, final stage (B2) | ||
| 14 | VDS(B1) | drain-source voltage of peaking section, driver stage (B1) | ||
| 15 | RF_OUT_B/VDS(B2) | RF output peaking section (B) / drain-source voltage of peaking section, final stage (B2) | ||
| 16 | RF_OUT_A/VDS(A2) | RF output carrier section (A) / drain-source voltage of carrier section, final stage (A2) | ||
| flange | GND | RF ground |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLM7G1822S-80AB | 9340 687 26518 | BLM7G1822S-80ABY | RFMW | Buy | Not available |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLM7G1822S-80AB | 9340 687 26518 | BLM7G1822S-80ABY | RFMW | Buy | Not available |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
| LDMOS 2-stage power MMIC | Data sheet | 2015-12-07 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLM7G1822S-80AB(G) (Data sheet) | Design support | 2014-12-01 |