Power LDMOS transistor

A 135 W LDMOS transistor for non cellular communication and industrial applications. The excellent ruggedness of this device makes it ideal for mobile NCC and ISM applications in the frequency range from HF to 1300 MHz.

Features and benefits

  • Designed for broadband operation
  • High efficiency
  • Integrated dual sided ESD protection
  • Excellent ruggedness
  • High power gain
  • Excellent reliability
  • Easy power control
  • Excellent stability
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Non cellular communication applications
  • Industrial, scientific and medical applications

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF944P

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 1300 MHz
PL(1dB) nominal output power at 1 dB gain compression 135 W
Test signal: Pulsed RF
VDS drain-source voltage PL = 135 W [0] 32 V
Gp power gain PL = 135 W [0] 19.3 20.3 dB
RLin input return loss PL = 135 W [0] -9 -6 dB
ηD drain efficiency PL = 135 W [0] 63 67 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF944P CDFM4
(SOT1228A)
sot1228a_po Tray; 20-fold; non-dry pack Active Standard Marking BLF944PU
(9349 606 51112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain 1
2 D2 drain 2
3 G1 gate 1
4 G2 gate 2
5 S souce

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF944P 9349 606 51112 BLF944PU DigiKey Buy Request samples
RFMW Buy

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF944P 9349 606 51112 BLF944PU DigiKey Buy Request samples
RFMW Buy

Design support