BLF8G24LS-200P
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BLF8G24LS-200P
Download datasheetPower LDMOS transistor
200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for broadband operation (2300 MHz to 2400 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Applications
- RF power amplifiers for base stations
- Multicarrier applications in the 2300 MHz to 2400 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2300 | 2400 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 200 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| Gp | power gain | VDS = 28 V | 15.8 | 17.2 | dB | |
| RLin | input return loss | VDS = 28 V; IDq = 1740 mA | -11 | -8 | dB | |
| ηD | drain efficiency | VDS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; IDq = 1740 mA | 27 | 32 | % | |
| PL(AV) | average output power | 60 | W | |||
| ACPR5M | adjacent channel power ratio (5 MHz) | PL(AV) = 60 W; VDS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; IDq = 1740 mA | -37 | -33 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF8G24LS-200P | SOT539B (SOT539B) |
sot539b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF8G24LS-200P,118 (9340 663 03118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF8G24LS-200P,112 (9340 663 03112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF8G24L(S)-200P (Data sheet) | Design support | 2012-10-30 | |
| BLF8G24L-200P Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-03-29 |