BLF8G22LS-205V
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF8G22LS-205V
Download datasheetPower LDMOS transistor
205 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2100 MHz to 2200 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for broadband operation
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifiers for base stations and multi carrier applications in the 2100 MHz to 2200 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2100 | 2200 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 205 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 50.1 W; VDS = 28 V [0] | 17.1 | 18.3 | dB | |
| RLin | input return loss | PL(AV) = 50.1 W; VDS = 28 V [0] | -10 | -6 | dB | |
| ηD | drain efficiency | PL(AV) = 50.1 W; VDS = 28 V [0] | 27.5 | 32.5 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 50.1 W; VDS = 28 V [0] | -30 | -25 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF8G22LS-205V | CDFM6 (SOT1239B) |
sot1239b_po | Reel 13" Q1/T1 | Discontinued | Standard Marking |
BLF8G22LS-205VJ (9340 690 84118) |
|
| Bulk Pack | Discontinued | Standard Marking |
BLF8G22LS-205VU (9340 690 84112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source | ||
| 4 | D.L | decoupling lead | ||
| 5 | D.L | decoupling lead | ||
| 6 | n.c | not connected | ||
| 7 | n.c | not connected |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF8G22LS-205V (Data sheet) | Design support | 2015-07-24 | |
| BLF8G22LS-205V Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-03-29 |