BLF7G27L-200PB
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF7G27L-200PB
Download datasheetPower LDMOS transistor
200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for W-CDMA base stations
- Multicarrier applications in the 2600 MHz to 2700 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2600 | 2700 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 200 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | VDS = 32 V | 14.8 | 16.5 | 17.7 | dB |
| RLin | input return loss | VDS = 32 V; IDq = 1700 mA | -15 | -5 | dB | |
| ηD | drain efficiency | VDS = 32 V; 2620 MHz ≤ f ≤ 2690 MHz; IDq = 1700 mA | 25.5 | 29 | % | |
| PL(AV) | average output power | 65 | W | |||
| ACPR | adjacent channel power ratio | PL(AV) = 65 W; VDS = 32 V; 2620 MHz ≤ f ≤ 2690 MHz; IDq = 1700 mA | -30 | -27 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF7G27L-200PB | CDFM8 (SOT1110A) |
sot1110a_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF7G27L-200PB,118 (9340 653 17118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF7G27L-200PB,112 (9340 653 17112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | DRAIN1 | drain 1 |
|
|
| 2 | DRAIN2 | drain 2 | ||
| 3 | GATE1 | gate 1 | ||
| 4 | GATE2 | gate 2 | ||
| 5 | SOURCE | source | ||
| 6 | SENSE DRAIN | sense drain | ||
| 7 | SENSE DRAIN | sense drain | ||
| 8 | SENSE GATE | sense gate | ||
| 9 | SENSE GATE | sense gate |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF7G27L-200PB (Data sheet) | Design support | 2012-02-27 |