BLF7G10L-250
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BLF7G10L-250
Download datasheetPower LDMOS transistor
250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for broadband operation (869 MHz to 960 MHz)
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use (input and output)
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifiers for W-CDMA base stations and multi carrier applications in the 869 MHz to 960 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 920 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 250 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 60 W; VDS = 30 V [0] | 18.5 | 19.5 | dB | |
| RLin | input return loss | PL(AV) = 60 W; VDS = 30 V; IDq = 1800 mA [0] | -15.5 | -10 | dB | |
| ηD | drain efficiency | PL(AV) = 60 W; VDS = 30 V; 920 MHz ≤ f ≤ 960 MHz; IDq = 1800 mA [0] | 27 | 30.5 | % | |
| PL(AV) | average output power | [0] | 60 | W | ||
| ACPR | adjacent channel power ratio | PL(AV) = 60 W; VDS = 30 V; 920 MHz ≤ f ≤ 960 MHz; IDq = 1800 mA [0] | -34 | -31 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF7G10L-250 | SOT502A (SOT502A) |
sot502a_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF7G10L-250,118 (9340 656 06118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF7G10L-250,112 (9340 656 06112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2016-11-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF7G10L(S)-250 (Data sheet) | Design support | 2012-02-24 |