BLF6G22LS-40BN
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLF6G22LS-40BN
Download datasheet
This product has been discontinued.
Click here for discontinuation information.
The replacement is: BLM7G1822S-40PB
The replacement is: BLM7G1822S-40PB
Power LDMOS transistor
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (2000 MHz to 2200 MHz)
- Internally matched for ease of use
- Intergrated current sense
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
Applications
- RF power amplifiers for W-CDMA base stations
- Multi carrier applications in the 2000 MHz to 2200 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2000 | 2200 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 40 | W | |||
| Test signal: 2-c WCDMA | ||||||
| Gp | power gain | PL(AV) = 2.5 W; VDS = 28 V | 17.5 | 18.5 | 19.9 | dB |
| RLin | input return loss | PL(AV) = 20 W; VDS = 28 V; IDq = 345 mA | -16 | -9 | dB | |
| ηD | drain efficiency | PL(AV) = 2.5 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 345 mA | 13 | 16 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 2.5 W; VDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 345 mA | -57 | -50 | -45 | dBc |
| PARO | output peak-to-average ratio | PL(AV) = 20 W [0] | 3.6 | 4 | 4.8 | dB |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6G22LS-40BN | CDFM6 (SOT1112B) |
sot1112b_po | Reel 13" Q1/T1 | Withdrawn | Standard Marking |
BLF6G22LS-40BN,118 (9340 643 14118) |
|
| Bulk Pack | Withdrawn | Standard Marking |
BLF6G22LS-40BN,112 (9340 643 14112) |
Discontinuation information
| Type number | Ordering code (12NC) | Last-time buy date | Last-time delivery date | Replacement product | DN Notice | Status | Comments |
|---|---|---|---|---|---|---|---|
| BLF6G22LS-40BN | 9340 643 14118 | 2016-03-31 | 2016-06-30 | BLM7G1822S-40PB | 201506035DN | Full Withdrawal | Replacement: BLF6G22LS-40P or BLM7G1822S-40PB(G) |
| BLF6G22LS-40BN | 9340 643 14112 | 2016-03-31 | 2016-06-30 | BLM7G1822S-40PB | 201506035DN | Full Withdrawal | Replacement: BLF6G22LS-40P or BLM7G1822S-40PB(G) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source | ||
| 4 | SD | sense drain | ||
| 5 | SD | sense drain | ||
| 6 | SG | sense gate | ||
| 7 | SG | sense gate |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF6G22L(S)-40BN (Data sheet) | Design support | 2012-06-29 |