BLF6G21-10G
Download datasheetBLF6G21-10G
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- No internal matching for broadband operation.
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations
- Broadcast drivers
- Multicarrier applications in the HF to 2200 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1 | 2200 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 10 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 0.7 W; VDS = 28 V [0] | 18.5 | dB | ||
| ηD | drain efficiency | PL(AV) = 0.7 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 100 mA [0] | 15 | % | ||
| PL(AV) | average output power | 0.7 | W | |||
| ACPR | adjacent channel power ratio | PL(AV) = 0.7 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 100 A [0] | -50 | dBc | ||
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF6G21-10G | CDIP2 (SOT538A) |
sot538a_po | Reel 11¼" Q1/T1 in LargePack | Transferred | Standard Marking |
BLF6G21-10G,135 (9340 634 36135) |
|
| Bulk Pack | Transferred | Standard Marking |
BLF6G21-10G,112 (9340 634 36112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |