BLF2425M7LS250P
Download datasheetBLF2425M7LS250P
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions.
Features and benefits
- High efficiency
- Easy power control
- Excellent ruggedness
- Excellent thermal stability
- Integrated ESD protection
- Designed for broadband operation (2400 MHz to 2500 MHz)
- Internally matched
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as ISM and industrial heating.
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2400 | 2500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 250 | W | |||
| Test signal: CW | ||||||
| Gp | power gain | PL = 250 W; VDS = 28 V | 15 | dB | ||
| RLin | input return loss | PL = 250 W; VDS = 28 V; IDq = 20 mA | -18 | dB | ||
| ηD | drain efficiency | PL = 250 W; VDS = 28 V; f = 2450 MHz; IDq = 20 mA | 51 | % | ||
| PL(AV) | average output power | VDS = 28 V; f = 2450 MHz; IDq = 20 mA | 250 | W | ||
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF2425M7LS250P | SOT539B (SOT539B) |
sot539b_po | Reel 13" Q1/T1 | Transferred | Standard Marking |
BLF2425M7LS250P:11 (9340 659 79118) |
|
| Bulk Pack | Transferred | Standard Marking |
BLF2425M7LS250P,11 (9340 659 79112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-25 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2024-10-08 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF2425M7L(S)250P (Data sheet) | Design support | 2013-02-21 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| BLF2425M7L250P Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-04-14 |