BLC9H10XS-60P
Download datasheetBLC9H10XS-60P
Download datasheetThis product is not recommended for design-in.
The recommended type is: BLM9H0610S-60PG
Power LDMOS transistor
60 W LDMOS packaged symmetric power transistor for base station applications at frequencies from 400 MHz to 1000 MHz.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (400 MHz to 1000 MHz)
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 400 MHz to 1000 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 400 | 1000 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 60 | W | |||
| Test signal: 1-c W-CDMA @ 925 to 960 MHz | ||||||
| VDS | drain-source voltage | 925 to 960 MHz [0] | 50 | V | ||
| Gp | power gain | 925 to 960 MHz [0] | 16.5 | dB | ||
| ηD | drain efficiency | 925 to 960 MHz [0] | 13 | % | ||
| ACPR | adjacent channel power ratio | 925 to 960 MHz [0] | -47 [1] | dBc | ||
| Test signal: 1-c W-CDMA @ 785 to 960 MHz | ||||||
| VDS | drain-source voltage | 785 to 960 MHz [2] | 48 | V | ||
| Gp | power gain | 785 to 960 MHz [2] | 16.1 | dB | ||
| ηD | drain efficiency | 785 to 960 MHz [2] | 11.9 | % | ||
| ACPR | adjacent channel power ratio | 717 to 728 MHz [2] | -46.6 [3] | dBc | ||
Package / Packing
All type numbers in the table below are not recommended for design-in.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC9H10XS-60P | SOT1273-1 (SOT1273-1) |
sot1273-1_po | Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLC9H10XS-60PY (9349 601 04518) |
|
| Tray, NonBakeable, Multiple in Drypack | Active | Standard Marking |
BLC9H10XS-60PZ (9349 601 04517) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2018-05-29 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC9H10XS-60P (Data sheet) | Design support | 2018-05-31 | |
| BLC9H10XS-60P Model for ADS (Keysight Advanced Design System) | Simulation model | 2018-08-13 |