BLC9G22XS-120AGWT
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLC9G22XS-120AGWT
Download datasheetPower LDMOS transistor
120 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to 2200 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2110 | 2200 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 120 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | 2110 to 2200 MHz [0] | 28 | V | ||
| Gp | power gain | 2110 to 2200 MHz [0] | 16.8 | dB | ||
| ηD | drain efficiency | 2110 to 2200 MHz [0] | 45 | % | ||
| PL(AV) | average output power | 2110 to 2200 MHz [0] | 15 | dBm | ||
| ACPR | adjacent channel power ratio | 2110 to 2200 MHz [0] | -34 [1] | dBc | ||
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC9G22XS-120AGWT | SOT1278-1 (SOT1278-1) |
sot1278-1_po | Reel 13" Q1/T1 in Drypack | Withdrawn | Standard Marking |
BLC9G22XS-120AGWTY (9349 601 69518) |
|
| Tray, NonBakeable, Multiple in Drypack | Withdrawn | Standard Marking |
BLC9G22XS-120AGWTZ (9349 601 69517) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1M | drain1 (main) |
|
|
| 2 | D2P | drain2 (peak) | ||
| 3 | G1M | gate1 (main) | ||
| 4 | G2P | gate2 (peak) | ||
| 5 | VDM | video decoupling (main) | ||
| 6 | VDP | video decoupling (peak) | ||
| 7 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2019-02-07 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2024-05-23 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| LDMOS ruggedness reliability | Other type | 2017-03-28 | |
| Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
| LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC9G22XS-120AGWT (Data sheet) | Design support | 2019-02-07 | |
| BLC9G22XS-120AGWT Model for ADS (Keysight Advanced Design System) | Simulation model | 2019-02-07 |