BLC9G10XS-120A
Download datasheetPower LDMOS transistor
120 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Designed for broadband operation
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifier for W-CDMA base stations and multi carrier applications in the 920 MHz to 960 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 920 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 120 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | 925 to 960 MHz [0] | 28 | V | ||
| Gp | power gain | 925 to 960 MHz [0] | 20 | dB | ||
| ηD | drain efficiency | 925 to 960 MHz [0] | 50 | % | ||
| PL(AV) | average output power | 925 to 960 MHz [0] | 18 | W | ||
| ACPR | adjacent channel power ratio | 925 to 960 MHz [0] | -28 [1] | dBc | ||
| IDq | quiescent drain current | 925 to 960 MHz [0] | 150 | mA | ||
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLC9G10XS-120A | SOT1273-1 (SOT1273-1) |
sot1273-1_po | Reel 13" Q1/T1 in Drypack | Withdrawn | Standard Marking |
BLC9G10XS-120AY (9349 601 75518) |
| Tray, NonBakeable, Multiple in Drypack | Withdrawn | Standard Marking |
BLC9G10XS-120AZ (9349 601 75517) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2018-11-29 | |
| Biasing asymmetrical Doherty RF power transistor | Other type | 2016-08-31 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Packages for RF power transistors | Leaflet | 2024-10-25 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2025-02-04 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC9G10XS-120A (Data sheet) | Design support | 2018-12-31 | |
| BLC9G10XS-120A Model for ADS (Keysight Advanced Design System) | Simulation model | 2018-12-31 |