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B11G3742N81D

B11G3742N81D

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LDMOS 3-stage integrated Doherty MMIC

The B11G3742N81D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 3700 MHz to 4200 MHz. Available in PQFN outline.

Features and benefits

  • Integrated input splitter
  • Integrated output combiner
  • 25 Ω output impedance thanks to integrated pre-match
  • Designed for large RF and instantaneous bandwidth operation
  • High linearity
  • Designed for large RF and instantaneous bandwidth operation
  • Independent control of carrier and peaking bias
  • Integrated ESD protection
  • Integrated bias gate switch
  • Source impedance 50 Ω; high power gain
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Macrocell base station driver
  • Microcell base station
  • 5G mMIMO
  • W-CDMA/LTE
  • Active antenna
  • General purpose applications

Downloads

Datasheet
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Design tool

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Transistor:
B11G3742N81D

LDMOS 3-stage integrated Doherty MMIC

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 3700 4200 MHz
PL(3dB) nominal output power at 3 dB gain compression 80 W
Test signal: Pulsed CW
VDS drain-source voltage [0] [1] 28 V
Gp power gain PL = 5 W (37 dBm) [0] [1] 29.5 32 36 dB
ηD drain efficiency PL = PL(3dB) [0] [1] 30 38 %
ηD drain efficiency PL = 5 W (37 dBm) [0] [1] 14 20 %
RLin input return loss PL = 5 W (37 dBm) [0] [1] -15 -10 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering		 Packing Product status Marking Orderable part number,
(Ordering code (12NC))
B11G3742N81D PQFN 12x7
(PQFN-12x7-36-1)		 pqfn-12x7-36-1_po TR13; 1500-fold; 24 mm; dry pack Active Standard Marking B11G3742N81DX
(9349 606 59525)
TR7; 300-fold; 24 mm; dry pack Active Standard Marking B11G3742N81DYZ
(9349 606 59535)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 GND ground
2 VDS2_A/decoupling drain-source voltage of final stages of section A
3 c.t.g. connect to ground
4 VGS(carr) gate-source voltage of carrier
5 VGS(peak) gate-source voltage of peaking
6 VDS1_A drain-source voltage of driver stages of section A
7 GND ground
8 decoupling video-lead for decoupling
9 PA_e PA enable trigger signal, 0 V to 5 V, IDq-bias ON/OFF corresponds to logic HIGH/LOW
10 VDD(5V) supply voltage (5 V)
11 GND ground
12 RF_IN_A RF input of section A
13 GND ground
14 RF_IN_B RF input of section B
15 GND ground
16 VDD(5V) supply voltage (5 V)
17 PA_e PA enable trigger signal, 0 V to 5 V, IDq-bias ON/OFF corresponds to logic HIGH/LOW
18 decoupling video-lead for decoupling
19 GND ground
20 VDS1_B drain-source voltage of driver stages of section B
21 VGS(peak) gate-source voltage of peaking
22 VGS(carr) gate-source voltage of carrier
23 c.t.g. connect to ground
24 VDS2_B/decoupling drain-source voltage of final stages of section B
25 GND ground
26, 27, 28, 29, 30 RF_OUT_B RF output of section B
31 GND ground
32, 33, 34, 35, 36 RF_OUT_A RF output of section A

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
B11G3742N81D 9349 606 59525 B11G3742N81DX RFMW Buy Not available
B11G3742N81D 9349 606 59535 B11G3742N81DYZ DigiKey Buy Request samples
RFMW Buy

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
B11G3742N81D 9349 606 59525 B11G3742N81DX RFMW Buy Not available
B11G3742N81D 9349 606 59535 B11G3742N81DYZ DigiKey Buy Request samples
RFMW Buy

Design support

Title Type Date
Printed-Circuit Board (PCB) B11G3742N81D (Data sheet) Design support 2023-02-10