B10G3336N16DL
Download datasheetB10G3336N16DL
Download datasheetLDMOS 3-stage integrated Doherty MMIC
The B10G3336N16DL is a 3-stage 16 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a general-purpose device in the frequency range from 3300 MHz to 3600 MHz. Available in LGA outline.
Features and benefits
- Integrated input splitter
- Integrated output combiner
- Very high efficiency
- Designed for broadband operation (frequency 3300 MHz to 3600 MHz)
- Designed for ultra VBW
- Independent control of carrier and peaking bias
- Integrated ESD protection
- Excellent thermal stability
- High power gain, input and output matched to impedance 50 Ω
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA, LTE and NR small cell base stations in the 3300 MHz to 3600 MHz frequency range
Parametrics
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 3300 | 3600 | MHz | ||
PL(3dB) | nominal output power at 3 dB gain compression | 16 | W | |||
Test signal: CW pulsed | ||||||
VDS | drain-source voltage | [0] | 28 | V | ||
Gp | power gain | [0] | 32 | 35 | dB | |
ηD | drain efficiency | [0] | 27 | 32 | % | |
RLin | input return loss | [0] | -14 | -8 | dB |
Package / Packing
Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
---|---|---|---|---|---|---|---|
B10G3336N16DL | LGA-7x7-20-2 (LGA-7x7-20-2) |
lga-7x7-20-2_po | TR13; 3000-fold; 16 mm; dry pack | Active | Standard Marking |
B10G3336N16DLX (9349 606 42525) |
|
TR13; 1000-fold; 16 mm; dry pack | Active | Standard Marking |
B10G3336N16DLZ (9349 606 42515) |
Pinning info
Pin | Symbol | Description | Simplified outline | Graphic symbol |
---|---|---|---|---|
1 | VGS_P | gate-source voltage of peaking | ||
2 | NC | not connected (connection to ground is allowed) | ||
3 | GND | ground (connection to ground is required) | ||
4 | RFin | RF input | ||
5 | GND | ground (connection to ground is required) | ||
6 | GND | ground (connection to ground is required) | ||
7 | VDS1 | drain-source voltage of driver stages | ||
8 | NC | not connected (connection to ground is allowed) | ||
9 | VDS2 | drain-source voltage of final stages | ||
10 | GND | ground (connection to ground is required) | ||
11 | GND | ground (connection to ground is required) | ||
12 | RFout | RF output | ||
13 | GND | ground (connection to ground is required) | ||
14 | NC | not connected (connection to ground is allowed) | ||
15 | NC | not connected (connection to ground is allowed) | ||
16 | GND | ground (connection to ground is required) | ||
17 | NC | not connected (connection to ground is allowed) | ||
18 | GND | ground (connection to ground is required) | ||
19 | VDS1 | drain-source voltage of driver stages | ||
20 | VGS_C | gate-source voltage of carrier | ||
21 | GND | RF ground (connection to ground is required) |
Ordering & availability
Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
---|---|---|---|---|---|
B10G3336N16DL | 9349 606 42525 | B10G3336N16DLX | DigiKey | Buy | Not available |
RFMW | Buy | ||||
B10G3336N16DL | 9349 606 42515 | B10G3336N16DLZ | RFMW | Buy | Request samples |
Ordering & availability
Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
---|---|---|---|---|---|
B10G3336N16DL | 9349 606 42525 | B10G3336N16DLX | DigiKey | Buy | Not available |
RFMW | Buy | ||||
B10G3336N16DL | 9349 606 42515 | B10G3336N16DLZ | RFMW | Buy | Request samples |
Documentation
Title | Type | Date | |
---|---|---|---|
LDMOS 3-stage integrated Doherty MMIC | Data sheet | 2023-09-28 | |
Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-07-24 | |
Packages for RF power transistors | Leaflet | 2024-10-25 | |
LDMOS ruggedness reliability | Other type | 2017-03-28 | |
Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit | Other type | 2017-05-02 | |
LDMOS technology for RF power amplifiers | Other type | 2017-05-03 | |
RF power solutions for Wireless Infrastructure | Brochure | 2024-10-08 |
Design support
Title | Type | Date | |
---|---|---|---|
Printed-Circuit Board (PCB) B10G3336N16DL (Data sheet) | Design support | 2023-10-02 |