You are cordially invited to join us in San Diego between June 11-16 at this year’s IEEE MTT International Microwave Symposium (IMS). This is the world’s largest microwave components conference and exhibition where – from June 13 to 15 - Ampleon will feature and demonstrate its latest LDMOS and GaN RF power transistors and integrated products at booth #1835. If you have any questions or wish to plan a meeting at EuMW, please do not hesitate to contact us.
Our solutions highlight the latest for 5G Telecom applications including a broad range of highly efficient small cell, integrated massive MIMO, LDMOS Doherty drivers as well as high power final stage GaN devices suitable for use in all 5G frequency bands.
The Ampleon booth will also feature our latest solid state power amplifiers targeting industrial, particle acceleration, medical, aerospace, and broadcast applications. These GaN RF products are specifically designed to deliver the next level of high-power, continuous-wave solutions specifically engineered for the best in efficiency while achieving the lowest possible thermal resistance. Also on display will be the industry’s most rugged solid state ART LDMOS Transistors that are ideally suited as RF sources for plasma generators, CO2 laser drivers, magnetic resonance imaging and fusion energy applications.
Furthermore, our technical experts will be featured in the Technical Program of IMS 2023 as follows:
Our technical experts will be part of the conference program:
| Date | Time | Presentation / Workshop Title | Author |
| Monday, June 12, 2023 | 09:15 – 09:50 | WMA-3: PA System Characterization Under Realistic Signals and Array Loading Effects: A Must | Mohadig Rousstia |
| Monday, June 12, 2023 | 15:10 – 17:00 |
Industry Showcase / Ballroom 20 Foyer We2C-2: Continuous Quasi-Load Insensitive Class-E Mode for Wideband Doherty Power Amplifiers |
Xuan Anh Nghiem |
| Wednesday, June 14, 2023 | 10:30 – 10:50 | We2C-2: Continuous Quasi-Load Insensitive Class-E Mode for Wideband Doherty Power Amplifiers | Xuan Anh Nghiem, John Gajadharsing |
| Wednesday, June 14, 2023 | 15:10 – 17:00 | IF1-21: Impact of Emission Time Constant on the Linearizability of AlGaN/GaN HEMTs | Zhijian Yu – Speaker: John Gajadharsing |
Come and see us at 11 a.m. or 2 p.m. on our Booth #1835 at IMS 2023 for a live demo of BLM9D3538-12AM LDMOS driver and C5H3337N110D GaN final stage. The outstanding performance is achieved on the 5G frequency band of 3.3 to 3.7 GHz, utilizing Ampleon’s LDMOS and GaN power amplifiers supporting 400 MHz signal bandwidth. Combined with AMD’s Zynq RFSoC DFE Adaptive Radio SoC, excellent power amplifier linearity and efficiency has been achieved. Please also join us to discuss the details of the latest amplifier solutions.