Events

European Microwave Week (EuMW) 2024

September 24-26, 2024 | Paris | France

Waves connecting Europe

… is the theme of this year’s European Microwave Week (EuMW). From September 22 to 27, experts will gather in the Expo Porte de Versailles in Paris for this annual, highly successful microwave event, featuring conferences and an exhibition. We look forward to seeing you there! If you have any questions or wish to plan a meeting at EuMW, please do not hesitate to contact us.

Exhibition

As a global leader in RF power technology, Ampleon will showcase its latest innovations in LDMOS and GaN RF power solutions at booth #109F from September 24 to 26 at the European Microwave Week (EuMW 2024), the largest event for Microwaves and RF in Europe, held in Paris, France.

This year, Ampleon will highlight cutting-edge solutions for 5G telecom applications, including a wide range of high-efficiency small cell, integrated massive MIMO solutions and market leading LDMOS Doherty drivers that are optimized for all 5G frequency bands.

In addition, the Ampleon booth will feature advanced solid-state power amplifiers for industrial, medical, particle acceleration, aerospace, and broadcast applications. These GaN RF products are specifically designed to deliver high-power continuous-wave performance with best-in-class efficiency and low thermal resistance. Also on display will be our durable ART LDMOS transistors, ideal for plasma generators, CO2 laser drivers, MRI systems, and fusion energy applications.

Visitors at booth #109F can explore key products from Ampleon’s wireless infrastructure portfolio, including innovative GaN and LDMOS RF power solutions designed for 5G base stations. These products offer top-tier performance, featuring highly efficient small cells, massive MIMO amplifier solutions, LDMOS macro drivers, and high-power GaN devices that cover key 5G frequency bands.

Conference

Our technical experts will be part of the conference program:

Sunday, September 21 / 08:30 – 17:50 (Room 723+724)
Characterization of RF power amplifiers for mMIMO under realistic loading effects in a phased-array system  – Mohadig Rousttia

Monday, September 23 / 14:50 – 15:10 (Room E05) / EuMIC10-4
Wideband fully integrated GaN Doherty Power Amplifier module for 5G massive MIMO applicationsPierre Ferris

Tuesday, September 24 / 08:30 – 08:50 (Room E05) / EuMC02-1
A Switch-Bank Approach for High-Power, High-Resolution, Fully Digital Transmitters - Delft University of Technology, Ampleon Netherlands B.V., Fraunhofer IZM - Robert Bootsman

Wednesday, September 25 / 09:50 – 10:10 (Room E05) / EuMC14-5
On the Linearizability of a GaN Technology ProcessAmmar Issaoun

Massive MIMO RF power solutions

G1M3438P70C

  • High efficiency fully integrated Doherty Power Amplifier Module (PAM): 50 Ω input / 50 Ω Output
  • 400 MHz RF wideband performance
  • Integrated gate switches & bias control with independent DACs, memory, and temperature sensor
  • Compact massive MIMO PA line-up LGA 12 x 8 mm with autonomous gate voltage regulation over temperature

C5H2350N10

  • Class AB 10-Watt GaN driver
  • Versatile wideband performance
  • Cost-effective and compact DFN 4.5 x 4 mm package
  • Enabling compact massive MIMO GaN amplifier line-up

C5H2327N110A

  • High Efficiency Doherty GaN Final
  • 400 MHz RF wideband performance
  • Compact DFN 7 x 6.5 mm
  • Enabling compact massive MIMO PA line-up

C5H3337N110D

  • High efficiency Doherty GaN final
  • 400 MHz wideband performance
  • Compact QFN 8 x 8 mm package
  • Enabling compact massive MIMO GaN PA line-up

C5H3440N70D

  • High efficiency Doherty GaN final
  • 600 MHz wideband performance
  • Compact QFN 8 x 8 mm package
  • Enabling compact massive MIMO GaN PA line-up
Small Cell RF power solutions

B10G3336N16DL

  • 3-stage fully input- and output matched integrated LDMOS Doherty PA in 7 x 7 mm LGA package
  • High gain and high efficiency in small cell as final stage, high linearity in driver mode
  • Compact and low-cost solution with outstanding thermal properties
  • Designed for wide signal bandwidth application (300 MHz) with Ultra VBW

B10G4750N12DL

  • 3-stage fully input- and output matched integrated LDMOS Doherty PA in 7 x 7 mm LGA package
  • High gain and hgh efficiency in small cell as final stage
  • Compact and low-cost solution with outstanding thermal properties
  • Designed for broadband operation
Macro driver and final stage RF power solutions

B10H0710N40D

  • Multiband, highly efficient driver for 40, 60 and 80 W sub-1 GHz (716 – 960 MHz) macro base stations
  • Compact and cost-effective design: 12 x 8 mm footprint, single-BOM reconfigurable layout, no interstage isolator

B10H0608N40D

  • Multiband, highly efficient driver for 40, 60 and 80 W sub-1 GHz (600 – 800 MHz) macro base stations
  • Compact and cost-effective design: 12 x 8 mm footprint, single-BOM reconfigurable layout, no interstage isolator

C4H10P600A

  • Highly efficient GaN macro Doherty final for 60 and 80 W macro base stations suitable for applications in 600 – 1000 MHz frequency range
  • Compact and cost-effective design due to OMP780 footprint
  • Released

C4H24F550AV

  • High power GaN asymmetrical Doherty
  • Industry high gain and efficiency with > 500 W peak power on 780-footprint
  • Air cavity ceramic packaging

C4H10P800A

  • Highly efficient GaN macro final for 80 and 100 W macro base stations suitable for applications in 600 – 1000 MHz frequency range
  • Compact and cost-effective design in OMP780 footprint

C4H27F400AV

  • High power GaN asymmetrical Doherty
  • Compact highly efficient design in 780-footprint
  • 194 MHz IBW capability
  • Air cavity ceramic packaging

B11G3742N81D

  • Multiband, highly efficient driver for 40, 60 and 80 W macro base stations
  • Compact and cost-effective design: 12 x 7 mm footprint, single-BOM reconfigurable layout, no interstage isolator