You are cordially invited to join us in Berlin from September 19 to 21 at this year’s European Microwave Week (EuMW). This is the largest trade show dedicated to Microwaves and RF in Europe. As the leading global partner in RF power, Ampleon will feature and demonstrate its latest LDMOS and GaN RF power transistors and integrated products at booth #313C. If you have any questions or wish to plan a meeting at EuMW, please do not hesitate to contact us.
Ampleon will be presenting the solutions highlight the latest for 5G telecom applications including a broad range of highly efficient small cell, integrated massive MIMO, LDMOS Doherty drivers as well as high power final stage GaN devices suitable for use in all 5G frequency bands.
Furthermore, the Ampleon booth will feature our latest solid state power amplifiers targeting industrial, particle acceleration, medical, aerospace, and broadcast applications. These GaN RF products are specifically designed to deliver the next level of high-power, continuous-wave solutions specifically engineered for the best in efficiency while achieving the lowest possible thermal resistance. Also on display will be the industry’s most rugged solid state ART LDMOS transistors that are ideally suited as RF sources for plasma generators, CO2 laser drivers, magnetic resonance imaging and fusion energy applications.
Visitors to the Ampleon booth will be able to see selected key products from the wireless infrastructure portfolio including innovative GaN and LDMOS RF power solutions for 5G base station applications that offer industry-leading performance. Our solutions highlight the latest for 5G Telecom applications including a broad range of highly efficient small cell, high performance massive MIMO amplifier solutions, LDMOS macro drivers as well as high power macro final stage GaN devices covering key 5G frequency bands.
Our technical experts will be part of the conference program:
Wednesday, September 20 / 09:00 – 10:40 (EuMC 15-5)
Comparison between latest Si-LDMOS and GaN technology for RF power base station transistors – Daniel Maassen, Jan de Boet, Jos van der Zanden, Rob M. Heeres, Fred van Rijs
C5H2350N10
- Class AB 10-Watt GaN driver
- Versatile wideband performance
- Cost-effective and compact DFN 4.5 x 4 mm package
- Enabling compact massive MIMO GaN amplifier line-up
C5H2327N110A
- High efficiency Doherty GaN final
- 400 MHz RF wideband performance
- Compact DFN 7 x 6.5 mm
- Enabling compact massive MIMO PA line-up
C5H3440N70D
- High efficiency Doherty GaN final
- 600 MHz wideband performance
- Compact QFN 8 x 8 mm package
- Enabling compact massive MIMO GaN PA line-up
B10G3336N16DL
- 3-stage fully input- and output matched integrated LDMOS Doherty PA in 7 x 7 mm LGA package
- High gain and high efficiency in small cell as final stage, high linearity in driver mode
- Compact and low-cost solution with outstanding thermal properties
- Designed for wide signal bandwidth application (300 MHz) with ultra VBW
B10G4750N12DL
- 3-stage fully input- and output matched integrated LDMOS Doherty PA in 7 x 7 mm LGA package
- High gain and high efficiency in small cell as final stage
- Compact and low-cost solution with outstanding thermal properties
- Designed for broadband operation
B10H0710N40D
- Multiband, highly efficient driver for 40, 60 and 80 W sub-1 GHz macro base stations
- Compact and cost-effective design: 12 x 8 mm footprint, single-BOM reconfigurable layout, no interstage isolator
C4H10P600A
- Highly efficient GaN macro Doherty final for 60 and 80 W macro base stations suitable for applications in 600 – 1000 MHz frequency range
- Compact and cost-effective design due to OMP780 footprint
C4H24F550AV
- High power GaN asymmetrical Doherty
- Industry high gain and efficiency with > 500 W peak power on 780-footprint
- Air cavity ceramic packaging
C4H27F400AV
- High power GaN asymmetrical Doherty
- Compact highly efficient design in 780-footprint
- 194 MHz IBW capability
- Air cavity ceramic packaging
B11G3742N81D
- Multiband, highly efficient driver for 40, 60 and 80 W macro base stations
- Compact and cost-effective design: 12 x 7 mm footprint, single-BOM reconfigurable layout, no interstage isolator